A brand new technology by Toshiba Corp will cut down the power consumption of smartphones and tablet computers. The Spin Transfer Torque Magnetic Random Access memory, or STT-MRAM, uses non-volatile cache memory, which switches off the power supply automatically if the gadget is not in operation.
Traditional STT-MRAM is currently used for cache memory, but because this accesses the device’s memory very often, it not only increases the power consumption, but it also slows down the operation speed.
In order to lower the power consumption, Toshiba increased the width and the multilayered structure of the material that forms the perpendicular magnetic memory element. They also improved the circuits, removing the path for leakage, by incorporating a three-transistor/one-MTJ structure. These brought the energy of the new STT-MRAM was calculated during simulations, the developers achieved 46pJ, or one third of what traditional STT-MRAMs have.
In addition, the company was able to produce a processor that uses the new technology. It operates with an ARM core and Linux OS, with reduced power consumption, but just as fast speed of performance.
The new STT-MRAM was developed as part of a project that Toshiba is currently carrying out with New Energy and Industrial Technology Development Organization. Toshiba is the sole developer of the product, with assistance from SK Hynix Inc.
The new technology will be officially presented at the 2012 IEEE International Electron Devices Meeting.